Display apparatus having a light-emitting device

ABSTRACT

A display apparatus including a light-emitting device is provided. The light-emitting device may include a first electrode, a light-emitting layer and a second electrode, which are sequentially stacked on a display area of a device substrate. An over-coat layer may be disposed between the device substrate and the light-emitting device. The light-emitting layer, the second electrode and the over-coat layer may extend on a bezel area of the device substrate. A moisture blocking hole penetrating the over-coat layer of the bezel area may include a first blocking side having a positive tapered shape and a second blocking side having a negative tapered shape. A lower passivation layer between the device substrate and the over-coat layer may include a lower penetrating hole disposed between the first blocking side and the second blocking side. A reflective pattern overlapping with the second blocking side may be disposed between the device substrate and the lower passivation layer. A barrier pattern may be disposed on the first blocking side of the moisture blocking hole. The barrier pattern may extend inside the lower penetrating hole. Thus, in the display apparatus, the deterioration of the light-emitting layer due to penetration of external moisture may be effectively prevented.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Korean Patent Application No.10-2021-0191748, filed on Dec. 29, 2021, which is hereby incorporated byreference as if fully set forth herein.

BACKGROUND Technical Field

The present disclosure relates to a display apparatus in which alight-emitting device is disposed on a display area of a devicesubstrate.

Description of the Related Art

Generally, a display apparatus provides an image to a user. For example,the display apparatus may include pixel areas. Each of the pixel areasmay realize a specific color. For example, each of the pixel areasincludes a light-emitting device. The light-emitting device may emitlight displaying a specific color. For example, the light-emittingdevice may include a first electrode, a light-emitting layer and asecond electrode which are sequentially stacked.

The pixel driving circuit electrically connected to the light-emittingdevice may be disposed in each pixel area. The pixel driving circuit maysupply a driving current corresponding to a data signal to thelight-emitting device according to a gate signal. For example, the pixeldriving circuit may include at least one thin film transistor. Aplurality of insulating layers for independently controlling each pixelarea may be stacked on the device substrate.

BRIEF SUMMARY

The inventors recognize that light-emitting layer may be vulnerable tomoisture. For example, in a display apparatus, the second electrode maycover an end portion of the light-emitting layer. The light-emittinglayer may be formed by a deposition process. For example, thelight-emitting layer may include a tail portion in which a thickness isgradually reduced. However, in the display apparatus, a size occupied bythe second electrode may be increased by the tail portion of thelight-emitting layer. Thus, in the display apparatus, non-emission areamay be increased. That is, in the display apparatus, an emission areamay be relatively decreased, and the quality of the image may belowered.

The present disclosure is directed to a display apparatus thatsubstantially obviates, among others, one or more problems due tolimitations and disadvantages of the related art.

The present disclosure provides a display apparatus capable ofpreventing the deterioration of the light-emitting layer due to externalmoisture, without increasing a bezel area.

The present disclosure is to provide a display apparatus capable ofreliably preventing the penetration of the external moisture through atail portion of the light-emitting layer, without decreasing a displayarea.

Additional advantages, technical solutions, and features of thedisclosure will be set forth in part in the description which followsand in part will become apparent to those having ordinary skill in theart upon examination of the following or may be learned from practice ofthe disclosure. The technical advantages and other advantages of thedisclosure may be realized and attained by the structure particularlypointed out in the written description and claims hereof as well as theappended drawings.

In accordance with the purpose of the present disclosure, as embodiedand broadly described herein, there is provided a display apparatuscomprising a device substrate. The device substrate includes a displayarea and a bezel area. A reflective pattern is disposed on the bezelarea of the device substrate. A separating partition is disposed on thereflective pattern. The separating partition includes a first separationside having a negative tapered shape. An over-coat layer is disposed onthe device substrate. The over-coat layer includes an over penetratinghole having a first over side and a second over side. The first overside is spaced away from the first separation side. The second over sideoverlap the second over side. A lower passivation layer is disposedbetween the reflective pattern and the separating partition. The lowerpassivation layer includes a lower penetrating hole. The lowerpenetrating hole is disposed between the first over side and the firstseparation side. A light-emitting device is disposed on the over-coatlayer of the display area. The light-emitting device includes a firstelectrode, a light-emitting layer and a second electrode, which aresequentially stacked. A barrier pattern is disposed on the first overside of the over penetrating hole. The barrier pattern extends insidethe lower penetrating hole. The light-emitting layer and the secondelectrode extend on the barrier pattern.

An end portion of the light-emitting layer may be surrounded by thebarrier pattern and the second electrode.

The barrier pattern may include the same material as the first electrodeof the light-emitting device.

A bank insulating layer covering an edge of the first electrode mayextend on the bezel area of the device substrate. An end portion of thebarrier pattern may be disposed between the over-coat layer and the bankinsulating layer of the bezel area.

A thin film transistor may be disposed between the display area of thedevice substrate and the lower passivation layer. The reflective patternmay include the same material as a gate electrode of the thin filmtransistor.

A gate insulating layer of the thin film transistor may extend betweenthe device substrate and the reflective pattern.

A device buffer layer may be disposed between the device substrate andthe thin film transistor. The device buffer layer may extend between thedevice substrate and the reflective pattern. A connecting pattern may bedisposed between the device substrate and the device buffer layer. Theconnecting pattern may include a region overlapping with the reflectivepattern. A signal wiring may be disposed between the device buffer layerand the lower passivation layer. The signal wiring may cross the bezelarea. The signal wiring may be connected to the connecting pattern atthe outside of the reflective pattern.

A light-blocking pattern may be disposed between the device substrateand the device buffer layer. The light-blocking pattern may overlap asemiconductor pattern of the thin film transistor. The connectingpattern may include the same material as the light-blocking pattern.

A color filter may be disposed between the lower passivation layer andthe over-coat layer. The color filter may overlap the light-emittingdevice. The separating partition may include the same material as thecolor filter.

A side of the color filter may have a positive taper shape.

In an embodiment, there is provided a display apparatus comprising adevice substrate. A light-emitting device is disposed on a display areaof the device substrate. The light-emitting device includes a firstelectrode, a light-emitting layer and a second electrode, which aresequentially stacked. An over-coat layer is disposed between the devicesubstrate and the light-emitting layer. The over-coat layer extends on abezel area of the device substrate. A first moisture blocking holepenetrating the over-coat layer of the bezel area includes a firstblocking side and a second blocking side. The first blocking side has apositive tapered shape. The second blocking side has a negative taperedshape. A first reflective pattern is disposed between the bezel area ofthe device substrate and the over-coat layer. The first reflectivepattern overlaps the second blocking side of the first moisture blockinghole. A lower passivation layer is disposed between the first reflectivepattern and the over-coat layer. The lower passivation layer including afirst lower penetrating hole. The first lower penetrating hole isdisposed between the first blocking side and the second blocking side. Afirst barrier pattern is disposed on the first blocking side of thefirst moisture blocking hole. The first barrier pattern extends insidethe first penetrating hole. The light-emitting layer and the secondelectrode extend on the first blocking side of the first moistureblocking hole.

The first reflective pattern may be spaced away from the first blockingside of the first moisture blocking hole.

A second moisture blocking hole may be disposed on the bezel area of thedevice substrate. The second moisture barrier pattern may include athird blocking side and a fourth blocking side. The third blocking sidemay have a positive tapered shape. The fourth blocking side may have anegative tapered shape. The second moisture blocking hole may be spacedaway from the first moisture blocking hole. A second reflective patternmay be disposed between the bezel area of the device substrate and theover-coat layer. The second reflective pattern may be spaced away fromthe first reflective pattern. The second reflective pattern may overlapthe fourth blocking side of the second moisture blocking hole. The lowerpassivation layer may include a second lower penetrating hole disposedbetween the third blocking side and the fourth blocking side.

A second barrier pattern may be disposed on the third blocking side ofthe second moisture blocking hole. The second barrier pattern may extendinside the second lower penetrating hole.

The second barrier pattern may include the same material as the firstbarrier pattern.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the present disclosure and are incorporated in andconstitute a part of this application, illustrate embodiment(s) of thepresent disclosure and together with the description serve to explainthe principle of the present disclosure. In the drawings:

FIG. 1 is a view schematically showing a display apparatus according toan embodiment of the present disclosure;

FIG. 2 is a view showing a circuit of a pixel area in the displayapparatus according to the embodiment of the present disclosure;

FIG. 3A is a view showing a cross section of the pixel area in thedisplay apparatus according to the embodiment of the present disclosure;

FIG. 3B is a view taken along I-I′ of FIG. 1 ;

FIG. 4 is an enlarged view of K region in FIG. 3B;

FIGS. 5A to 13A and 5B to 13B are views sequentially showing a method offorming the display apparatus according to an embodiment of the presentdisclosure;

FIG. 14 is a view showing the display apparatus according to anembodiment of the present disclosure; and

FIGS. 15 and 16 are views sequentially showing the method of forming thedisplay apparatus according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

Hereinafter, details related to the above objects, technicalconfigurations, and operational effects of the embodiments of thepresent disclosure will be clearly understood by the following detaileddescription with reference to the drawings, which illustrate someembodiments of the present disclosure. Here, the embodiments of thepresent disclosure are provided in order to allow the technical sprit ofthe present disclosure to be satisfactorily transferred to those skilledin the art, and thus the present disclosure may be embodied in otherforms and is not limited to the embodiments described below.

In addition, the same or extremely similar elements may be designated bythe same reference numerals throughout the specification and in thedrawings, the lengths and thickness of layers and regions may beexaggerated for convenience. It will be understood that, when a firstelement is referred to as being “on” a second element, although thefirst element may be disposed on the second element so as to come intocontact with the second element, a third element may be interposedbetween the first element and the second element.

Here, terms such as, for example, “first” and “second” may be used todistinguish any one element with another element. However, the firstelement and the second element may be arbitrary named according to theconvenience of those skilled in the art without departing the technicalsprit of the present disclosure.

The terms used in the specification of the present disclosure are merelyused in order to describe particular embodiments, and are not intendedto limit the scope of the present disclosure. For example, an elementdescribed in the singular form is intended to include a plurality ofelements unless the context clearly indicates otherwise. In addition, inthe specification of the present disclosure, it will be furtherunderstood that the terms “comprises” and “includes” specify thepresence of stated features, integers, steps, operations, elements,components, and/or combinations thereof, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or combinations.

And, unless ‘directly’ is used, the terms “connected” and “coupled” mayinclude that two components are “connected” or “coupled” through one ormore other components located between the two components.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andshould not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Embodiment

FIG. 1 is a view schematically showing a display apparatus according toan embodiment of the present disclosure. FIG. 2 is a view showing acircuit of a pixel area in the display apparatus according to theembodiment of the present disclosure. FIG. 3A is a view showing a crosssection of the pixel area in the display apparatus according to theembodiment of the present disclosure. FIG. 3B is a view taken along I-I′of FIG. 1 . FIG. 4 is an enlarged view of K region in FIG. 3B.

Referring to FIGS. 1 to 4 , the display apparatus according to theembodiment of the present disclosure may include a display panel DP, adata driver DD, a gate driving GD, a timing controller TC and a powerunit PU.

The display panel DP may generate an image being provided to a user. Forexample, the display panel DP may include a plurality of pixel areas PA.The data driver DD, the gate driver GD, the timing controller TC and thepower unit PU may provide a signal for the operation of each pixel areaPA through signal wirings DL, GL and PL. The signal wirings DL, GL andPL may include data lines DL, gate lines GL and power voltage supplylines PL. For example, the data driver DD may apply a data signal toeach pixel area PA through the data lines DL, the gate driver GD mayapply a gate signal to each pixel area PA through the gate lines GL, andthe power unit PU may supply a power voltage to each pixel area PAthrough the power voltage supply lines PL. The timing controller TC maycontrol the data driver DD and the gate driver GD. For example, the datadriver DD may receive digital video data and a source timing controlsignal from the timing controller TC, and the gate driver GD may receiveclock signals, reset clock signals and start signals from the timingcontroller TC.

Each of the pixel areas PA may realize a specific color. For example, alight-emitting device 300 may be disposed in each pixel area PA. Thelight-emitting device 300 may emit light displaying a specific color.For example, the light-emitting device 300 may include a first electrode310, a light-emitting layer 320 and a second electrode 330, which aresequentially stacked on a device substrate 100. The device substrate 100may include an insulating material. The device substrate 100 may includea transparent material. For example, the device substrate 100 mayinclude glass or plastic.

The first electrode 310 may include a conductive material. The firstelectrode 310 may have a high transmittance. For example, the firstelectrode 310 may be a transparent electrode made of a transparentconductive material, such as ITO and IZO.

The light-emitting layer 320 may generate light having luminancecorresponding to a voltage difference between the first electrode 310and the second electrode 330. For example, the light-emitting layer 320may include an emission material layer (EML) having an emissionmaterial. The emission material may include an organic material, aninorganic material or a hybrid material. For example, the displayapparatus according to the embodiment of the present disclosure may bean organic light-emitting display apparatus including an organicemission material.

The light-emitting layer 320 may have a multi-layer structure. Forexample, the light-emitting layer 320 may further include at least oneof a hole injection layer (HIL), a hole transport layer (HTL), anelectron transport layer (ETL) and an electron injection layer (EIL).Thus, in the display apparatus according to the embodiment of thepresent disclosure, the emission efficiency of the light-emitting layer320 may be improved.

The second electrode 330 may include a conductive material. The secondelectrode 330 may include a material different from the first electrode310. The reflectance of the second electrode 330 may be higher than thereflectance of the first electrode 310. For example, the secondelectrode 330 may include a metal, such as aluminum (Al) and silver(Ag). Thus, in the display apparatus according to the embodiment of thepresent disclosure, the light generated by the light-emitting layer 320may be emitted outside through the first electrode 310 and the devicesubstrate 100.

The pixel driving circuit DC electrically connected to thelight-emitting device 300 may be disposed in each pixel area PA. Theoperation of the light-emitting device 300 in each pixel area PA may becontrolled by the pixel driving circuit DC of the corresponding pixelarea PA. The pixel driving circuit DC of each pixel area PA may beelectrically connected to one of the data lines DL, one of the gatelines GL, and one of the power voltage supply lines PL. For example, thepixel driving circuit DC of each pixel area PA may supply a drivingcurrent corresponding to the data signal to the light-emitting device300 of the corresponding pixel area PA according to the gate signal. Thedriving current generated by the pixel driving circuit DC of each pixelarea PA may apply to the light-emitting device 300 of the correspondingpixel area PA for one frame. For example, the pixel driving circuit DCof each pixel area PA may include a first thin film transistor T1, asecond thin film transistor T2 and a storage capacitor Cst.

The first thin film transistor T1 may include a first semiconductorpattern, a first gate electrode, a first source electrode and a firstdrain electrode. The second thin film transistor T2 may have the samestructure as the first thin film transistor T1. For example, the secondthin film transistor T2 may include a second semiconductor pattern 221,a second gate electrode 223, a second source electrode 225 and a seconddrain electrode 227.

The first semiconductor pattern and the second semiconductor pattern 221may include a semiconductor material. For example, the firstsemiconductor pattern and the second semiconductor pattern 221 mayinclude an oxide semiconductor, such as IGZO. The second semiconductorpattern 221 may include the same material as the first semiconductorpattern. For example, the second semiconductor pattern 221 may bedisposed on the same layer as the first semiconductor pattern. Thesecond semiconductor pattern 221 may be formed simultaneously with thefirst semiconductor pattern.

Each of the first semiconductor pattern and the second semiconductorpattern 221 may include a source region, a drain region and a channelregion. The channel region may be disposed between the source region andthe drain region. The source region and the drain region may have aresistance lower than the channel region. For example, the source regionand the drain region may include a conductorized region of an oxidesemiconductor. The channel region may be a region of an oxidesemiconductor, which may be not a conductorized.

The first gate electrode and the second gate electrode 223 may include aconductive material. For example, the first gate electrode and thesecond gate electrode 223 may include a metal, such as aluminum (Al),chrome (Cr), copper (Cu), molybdenum (Mo), titanium (Ti) and tungsten(W). The second gate electrode 223 may include the same material as thefirst gate electrode. For example, the second gate electrode 223 may bedisposed on the same layer as the first gate electrode. The second gateelectrode 223 may be formed simultaneously with the first gateelectrode.

The first gate electrode may be disposed on the first semiconductorpattern. For example, the first gate electrode may overlap the channelregion of the first semiconductor pattern. The first gate electrode maybe insulated from the first semiconductor pattern. For example, thechannel region of the first semiconductor pattern may have an electricconductivity corresponding to a voltage applied to the first gateelectrode. The second gate electrode 223 may be disposed on the secondsemiconductor pattern 221. For example, the second gate electrode 223may overlap the channel region of the second semiconductor pattern 221.The second gate electrode 223 may be insulated from the secondsemiconductor pattern 221. The channel region of the secondsemiconductor pattern 221 may have an electric conductivitycorresponding to a voltage applied to the second gate electrode 223.

The first source electrode, the first drain electrode, the second sourceelectrode 225 and the second drain electrode 227 may include aconductive material. For example, the first source electrode, the firstdrain electrode, the second source electrode 225 and the second drainelectrode 227 may include a metal, such as aluminum (Al), chrome (Cr),copper (Cu), molybdenum (Mo), titanium (Ti) and tungsten (W). The firstdrain electrode may include the same material as the first sourceelectrode. For example, the first drain electrode may be disposed on thesame layer as the first source electrode. The first drain electrode maybe formed simultaneously with the first source electrode. The seconddrain electrode 227 may include the same material as the second sourceelectrode 225. For example, the second drain electrode 227 may bedisposed on the same layer as the second source electrode 225. Thesecond drain electrode 227 may be formed simultaneously with the secondsource electrode 225.

The first source electrode and the first drain electrode may include thesame material as the first gate electrode. For example, the first sourceelectrode and the first drain electrode may be disposed on the samelayer as the first gate electrode. The first source electrode and thefirst drain electrode may be formed simultaneously with the first gateelectrode. The first source electrode and the first drain electrode maybe insulated from the first gate electrode. For example, the firstsource electrode and the first drain electrode may be spaced away fromthe first gate electrode.

The second source electrode 225 and the second drain electrode 227 mayinclude the same material as the second gate electrode 223. For example,the second source electrode 225 and the second drain electrode 227 maybe disposed on the same layer as the second gate electrode 223. Thesecond source electrode 225 and the second drain electrode 227 may beformed simultaneously with the second gate electrode 223. The secondsource electrode 225 and the second drain electrode 227 may be insulatedfrom the second gate electrode 223. For example, the second sourceelectrode 225 and the second drain electrode 227 may be spaced away fromthe second gate electrode 223.

The first source electrode may be electrically connected to the sourceregion of the first semiconductor pattern. The first drain electrode maybe electrically connected to the drain region of the first semiconductorpattern. The second source electrode 225 may be electrically connectedto the source region of the second semiconductor pattern 221. The seconddrain electrode 227 may be electrically connected to the drain region ofthe second semiconductor pattern 221. The second source electrode 225and the second drain electrode 227 may include the same material as thefirst source electrode and the first drain electrode. For example, thesecond source electrode 225 and the second drain electrode 227 may bedisposed on the same layer as the first source electrode and the firstdrain electrode. The second source electrode 225 and the second drainelectrode 227 may be formed simultaneously with the first sourceelectrode and the first drain electrode. The first source electrode, thefirst drain electrode, the second source electrode 225 and the seconddrain electrode 227 may be spaced away from each other.

The thin film transistors T1 and T2 of each pixel area PA may bedisposed between the device substrate 100 and the light-emitting device300 of the corresponding pixel area PA. For example, at least one ofinsulating layers 110, 120, 130, 140 and 150 may be disposed on thedevice substrate 100. Thus, in the display apparatus according to theembodiment of the present disclosure, unnecessary connection between thethin film transistors T1 and T2 and the light-emitting device 300 ofeach pixel area PA may be prevented. For example, a device buffer layer110, a gate insulating layer 120, a lower passivation layer 130, anover-coat layer 140 and a bank insulating layer 150 may be sequentiallystacked on the device substrate 100.

The device buffer layer 110 may include an insulating material. Forexample, the device buffer layer 110 may include an inorganic insulatingmaterial, such as silicon oxide (SiO) and silicon nitride (SiN). Thedevice buffer layer 110 may include a multi-layer structure. Forexample, the device buffer layer 110 may have a stacked structure of alayer made of silicon nitride (SiN) and a layer made of silicon oxide(SiO).

The device buffer layer 110 may be disposed between the device substrate100 and the thin film transistors T1 and T2 of each pixel area PA. Thedevice buffer layer 110 may prevent pollution due to the devicesubstrate 100 in a process of forming the thin film transistors T1 andT2. For example, an entire surface of the device substrate 100 towardthe thin film transistors T1 and T2 of each pixel area PA may be coveredby the device buffer layer 110. The thin film transistors T1 and T2 ofeach pixel area PA may be disposed on the device buffer layer 110.

The gate insulating layer 120 may include an insulating material. Forexample, the gate insulating layer 120 may include an inorganicinsulating material, such as silicon oxide (SiO) and silicon nitride(SiN). The gate insulating layer 120 may include a material having ahigh dielectric constant. For example, the gate insulating layer 120 mayinclude a High-K material, such as hafnium oxide (HfO). The gateinsulating layer 120 may have a multi-layer structure.

The gate insulating layer 120 may be disposed on the device buffer layer110. The gate insulating layer 120 may extend between the semiconductorpattern 221 and the gate electrode 223 of each thin film transistor T1and T2. For example, the gate electrode 223 of each thin film transistorT1 and T2 may be insulated from the semiconductor pattern 221 of thecorresponding thin film transistor T1 and T2 by the gate insulatinglayer 120. The gate insulating layer 120 may cover the firstsemiconductor pattern and the second semiconductor pattern 221 of eachpixel area PA. The first gate electrode and the second gate electrode223 of each pixel area PA may be disposed on the gate insulating layer120.

The first source electrode, the first drain electrode, the second sourceelectrode 225 and the second drain electrode 227 of each pixel area PAmay be disposed on the gate insulating layer 120. For example, the gateinsulating layer 120 of each pixel area PA may include a first sourcecontact hole exposing the source region of the first semiconductorpattern, a first drain contact hole exposing the drain region of thefirst semiconductor pattern, a second source contact hole exposing thesource region of the second semiconductor pattern 221, and a seconddrain contact hole exposing the drain region of the second semiconductorpattern 221.

The lower passivation layer 130 may include an insulating material. Forexample, the lower passivation layer 130 may include an inorganicinsulating material, such as silicon oxide (SiO) and silicon nitride(SiN).

The lower passivation layer 130 may be disposed on the gate insulatinglayer 120. The lower passivation layer 130 may prevent the damage ofeach thin film transistor T1 and T2 due to external impact and moisture.For example, the first gate electrode, the first source electrode, thefirst drain electrode, the second gate electrode 223, the second sourceelectrode 225 and the second drain electrode 227 of each pixel area PAmay be covered by the lower passivation layer 130. The lower passivationlayer 130 may extend along a surface of each thin film transistor T1 andT2 opposite to the device substrate 100. The lower passivation layer 130may be in direct contact with the gate insulating layer 120 at theoutside of the thin film transistors T1 and T2 in each pixel area PA.

The over-coat layer 140 may include an insulating material. Theover-coat layer 140 may include a material different from the lowerpassivation layer 130. For example, the over-coat layer 140 may includean organic insulating material.

The over-coat layer 140 may be disposed on the lower passivation layer130. The over-coat layer 140 may remove a thickness difference due tothe thin film transistors T1 and T2 of each pixel area PA. For example,an upper surface of the over-coat layer 140 opposite to the devicesubstrate 100 may be a flat surface. The first electrode 310, thelight-emitting layer 320 and the second electrode 330 of each pixel areaPA may be sequentially stacked on the upper surface of the over-coatlayer 140. For example, the first electrode 310 of each pixel area PAmay be electrically connected to the second thin film transistor T2 ofthe corresponding pixel area PA through one of electrode contact holespenetrating the over-coat layer 140. Thus, in the display apparatusaccording to the embodiment of the present disclosure, thecharacteristics deviation due to the generating position difference ofthe light emitted outside through the device substrate 100 may beprevented.

The bank insulating layer 150 may include an insulating material. Forexample, the bank insulating layer 150 may include an organic insulatingmaterial. The bank insulating layer 150 may include a material differentfrom the over-coat layer 140.

The bank insulating layer 150 may be disposed on the over-coat layer140. The first electrode 310 of each light-emitting device 300 may beinsulated from the first electrode 310 of adjacent light-emitting device300 by the bank insulating layer 150. For example, the bank insulatinglayer 150 may cover an edge of the first electrode 310 in each pixelarea PA. Thus, in the display apparatus according to the embodiment ofthe present disclosure, the light-emitting device 300 of each pixel areaPA may be independently controlled by the bank insulating layer 150. Thelight-emitting layer 320 and the second electrode 330 of eachlight-emitting device 300 may be stacked on a portion of thecorresponding first electrode 310 exposed by the bank insulating layer150. For example, the bank insulating layer 150 may define emission areaEA in each pixel area PA.

The emission area EA of each pixel area PA defined by the bankinsulating layer 150 may be not overlap with the pixel driving circuitDC of the corresponding pixel area PA. For example, the thin filmtransistors T1 and T2 of each pixel area PA may be disposed outside theemission area EA of the corresponding pixel area PA. Thus, in thedisplay apparatus according to the embodiment of the present disclosure,the light emitted from the light-emitting device 300 of each pixel areaPA may be not blocked by the thin film transistors T1 and T2 of thecorresponding pixel area PA.

The light-emitting layer 320 of each light-emitting device 300 may beconnected to the light-emitting layer 320 of adjacent light-emittingdevice 300. For example, the light-emitting layer 320 of eachlight-emitting device 300 may extend onto the bank insulating layer 150.The light emitted from the light-emitting device 300 of each pixel areaPA may display the same color as the light emitted from thelight-emitting device 300 of adjacent pixel area PA. For example, thelight-emitting layer 320 of each pixel area PA may generate white light.

Each of the pixel areas PA may realize a color different from adjacentpixel area PA. For example, each of the pixel area PA may include acolor filter 410 overlapping with the emission area EA of thecorresponding pixel area PA. The color filter 410 may realize a specificcolor using light passing therethrough. For example, the color filter410 of each pixel area PA may be disposed on a path of the light emittedfrom the light-emitting device 300 in the corresponding pixel area PA.The color filter 410 of each pixel area PA may be disposed between thedevice substrate 100 and the light-emitting device 300 of thecorresponding pixel area PA. For example, the color filter 410 of eachpixel area PA may be disposed between the device passivation layer 130and the over-coat layer 140. A thickness difference due to the colorfilter 410 of each pixel area PA may be removed by the over-coat layer140.

A voltage applied to the second electrode 330 of each light-emittingdevice 300 may be the same as a voltage applied to the second electrode330 of adjacent light-emitting device 300. For example, the secondelectrode 330 of each light-emitting device 300 may be electricallyconnected to the second electrode 330 of adjacent light-emitting device300. The second electrode 330 of each light-emitting device 300 mayinclude the same material as the second electrode 330 of adjacentlight-emitting device 300. For example, the second electrode 330 of eachlight-emitting device 300 may be formed simultaneously with the secondelectrode 330 of adjacent light-emitting device 300. Thus, in thedisplay apparatus according to the embodiment of the present disclosure,a process of forming the second electrode 330 of each light-emittingdevice 300 may be simplified.

A light-blocking pattern 250 may be disposed between the devicesubstrate 100 and each thin film transistor T1 and T2. For example, thelight-blocking pattern 250 may be disposed between the device substrate100 and the device buffer layer 110. The light-blocking pattern 250 mayinclude a material capable of absorbing or reflecting light. Thelight-blocking pattern 250 may include a conductive material. Forexample, the light-blocking pattern 250 may include a metal, such asaluminum (Al), chrome (Cr), copper (Cu), molybdenum (Mo), titanium (Ti)and tungsten (W).

External light travelling in a direction of the semiconductor pattern221 of each thin film transistor T1 and T2 may be blocked by thelight-blocking pattern 250. For example, the light-blocking pattern 250may include a region overlapping with the channel region of eachsemiconductor pattern 221. Thus, in the display apparatus according tothe embodiment of the present disclosure, a characteristics change ofeach thin film transistor T1 and T2 due to the external light may beprevented.

The first thin film transistor T1 of each pixel driving circuit DC maytransmit the data signal to the second thin film transistor T2 of thecorresponding pixel driving circuit DC according to the gate signal. Forexample, the first gate electrode of each pixel driving circuit DC maybe electrically connected to one of the gate lines GL, and the firstsource electrode of each pixel driving circuit DC may be electricallyconnected to one of the data lines DL. The second thin film transistorT2 of each pixel driving circuit DC may generate the driving currentcorresponding to the data signal. For example, the second gate electrode223 of each pixel driving circuit DC may be electrically connected tothe first drain electrode of the corresponding pixel driving circuit DC,and the second source electrode 225 of each pixel driving circuit DC maybe electrically connected to one of the power voltage supply lines PL.The driving current generated by the second thin film transistor T2 ofeach pixel area PA may be provided to the light-emitting device 300 ofthe corresponding pixel area PA. For example, the first electrode 310 ofeach pixel area PA may be electrically connected to the second drainelectrode 227 of the corresponding pixel area PA.

The gate lines GL may be disposed on the same layer as the gateelectrode 223 of each thin film transistor T1 and T2. For example, thegate lines GL may be disposed between the gate insulating layer 120 andthe lower passivation layer 130. The gate lines GL may include the samematerial as the gate electrode 223 of each thin film transistor T1 andT2. For example, the gate lines GL may be formed simultaneously with thegate electrode 223 of each thin film transistor T1 and T2. The firstgate electrode of each pixel area PA may be in direct contact with thecorresponding gate line GL.

The data lines DL may intersect the gate lines GL. The data lines DL maybe disposed on a layer different from the gate lines GL. For example,the data lines DL may be disposed between the device substrate 100 andthe device buffer layer 110. The data lines DL may include the samematerial as the light-blocking pattern 250. For example, the data linesDL may be formed simultaneously with the light-blocking pattern 250. Thedevice buffer layer 110 and the gate insulating layer 120 may includedata contact holes exposing a portion of each data line DL. The firstsource electrode of each pixel area PA may be connected to thecorresponding data line DL through one of the data contact holes.

The power voltage supply lines PL may extend in parallel to the datalines DL. For example, the power voltage supply lines PL may intersectthe gate lines GL. The power voltage supply lines PL may be disposed onthe same layer as the data lines DL. For example, the power voltagesupply lines PL may be disposed between the device substrate 100 and thedevice buffer layer 110. The power voltage supply lines PL may includethe same material as the data lines DL. For example, the power voltagesupply lines PL may be formed simultaneously with the data lines DL. Thedevice buffer layer 110 and the gate insulating layer 120 may includepower contact holes exposing a portion of each power voltage supply linePL. The second source electrode 225 of each pixel area PA may beconnected to the corresponding power voltage supply line PL through oneof the power contact holes.

The storage capacitor Cst of each pixel driving circuit DC may maintaina signal applied to the second gate electrode 223 of the correspondingpixel driving circuit DC for one frame. For example, the storagecapacitor Cst of each pixel driving circuit DC may be electricallyconnected between the second gate electrode 223 and the second drainelectrode 227 of the corresponding pixel driving circuit DC. The storagecapacitor Cst of each pixel driving circuit DC may have a structure inwhich at least two capacitor electrodes 231 and 232 are stacked. Forexample, the storage capacitor Cst of each pixel driving circuit DC mayhave a stacked structure of a first capacitor electrode 231 and a secondcapacitor electrode 232. The second capacitor electrode 232 of eachpixel driving circuit DC may be disposed on the first capacitorelectrode 231 of the corresponding pixel driving circuit DC. The secondcapacitor electrode 232 of each pixel driving circuit DC may beinsulated from the first capacitor electrode 231 of the correspondingpixel driving circuit DC. The storage capacitor Cst of each pixeldriving circuit DC may be formed using a conductive layer disposedbetween the device substrate 100 and the over-coat layer 140. Forexample, the first capacitor electrode 231 of each pixel driving circuitDC may be disposed between the device substrate 100 and the devicebuffer layer 110, and the second capacitor electrode 232 of each pixeldriving circuit DC may be disposed between the gate insulating layer 120and the lower passivation layer 130.

The first capacitor electrode 231 of each pixel driving circuit DC mayinclude the same material as the light-blocking pattern 250. Forexample, the first capacitor electrode 231 of each pixel driving circuitDC may include a metal, such as aluminum (Al), chrome (Cr), copper (Cu),molybdenum (Mo), titanium (Ti), tungsten (W). The first capacitorelectrode 231 of each pixel driving circuit DC may be formedsimultaneously with the light-blocking pattern 250. For example, thefirst capacitor electrode 231 of each pixel driving circuit DC may be indirect contact with the light-blocking pattern 250 disposed in thecorresponding pixel area PA.

The first capacitor electrode 231 of each pixel driving circuit DC maybe electrically connected to the second drain electrode 227 of thecorresponding pixel driving circuit DC. For example, the first capacitorelectrode 231 of each pixel driving circuit DC may be connected to thesecond drain electrode 227 of the corresponding pixel driving circuit DCthrough the light-blocking pattern 250 and the drain region of thesecond semiconductor pattern 221, which are disposed in thecorresponding pixel area PA. The drain region of the secondsemiconductor pattern 221 in each pixel area PA may be electricallyconnected to the light-blocking pattern 250 in the corresponding pixelarea PA. For example, the device buffer layer 110 may include storagecontact holes disposed between the light-blocking pattern 250 and thedrain region of the second semiconductor pattern 221 in each pixel areaPA. The drain region of the second semiconductor pattern 221 in eachpixel area PA may be connected to the light-blocking pattern 250 in thecorresponding pixel area PA through one of the storage contact holes.

The second capacitor electrode 232 of each pixel driving circuit DC mayinclude the same material as the gate electrodes 230 of thecorresponding pixel driving circuit DC. For example, the secondcapacitor electrode 232 of each pixel driving circuit DC may include ametal, such as aluminum (Al), chrome (Cr), copper (Cu), molybdenum (Mo),titanium (Ti), tungsten (W). The second capacitor electrode 232 of eachpixel driving circuit DC may be formed simultaneously with the gateelectrodes 230 of the corresponding pixel driving circuit DC.

The display panel DP may include a display area AA in which the pixelareas PA are disposed, and a bezel area BZ disposed outside the displayarea AA. For example, the light-emitting devices 300 may be disposed onthe over-coat layer 130 of the display area AA. The bezel area BZ maysurround the display area AA. The signal wirings DL, GL and PL may beconnected to the pixel driving circuit DC of each pixel area PA acrossthe bezel area BZ. For example, the data lines DL, the gate lines GL andthe power voltage supply lines PL, which are electrically connected tothe pixel driving circuit DC of each pixel area PA may extend on thebezel area BZ of the device substrate 100.

At least one of insulating layers 110, 120, 130, 140 and 150 forinsulating between the signal wirings DL, GL and PL may be disposed onthe bezel area BZ of the device substrate 100. For example, the devicebuffer layer 110, the gate insulating layer 120, the lower passivationlayer 130, the over-coat layer 140 and the bank insulating layer 150 mayextend on the bezel area BZ of the device substrate 100. The devicebuffer layer 110, the gate insulating layer 120, the lower passivationlayer 130, the over-coat layer 140 and the bank insulating layer 150 maybe sequentially stacked on the bezel area BZ of the device substrate100.

The over-coat layer 140 may include at least one over penetrating hole140 h disposed on the bezel area BZ of the device substrate 100. Theover penetrating hole 140 h may penetrate the over-coat layer 140 of thebezel area BZ. For example, the over penetrating hole 140 h may includea first over side 141 s toward the display area AA, and a second overside 142 s opposite to the first over side 141 s. The first over side141 s and the second over side 142 s may have a positive tapered shape.For example, a width of the over penetrating hole 140 h may decrease asa distance from the device substrate 100 decreases.

At least one separating partition 420 may be disposed between the lowerpassivation layer 130 and the over-coat layer 140 of the bezel area BZ.The separating partition 420 may include an insulating material. Forexample, the separating partition 420 may include the same material asthe color filter 410. The separating partition 420 may include a firstseparation side 421 s toward the display area AA, and a secondseparation side 422 s opposite to the first separation side 421 s. Thefirst separation side 421 s and the second separation side 422 s mayhave a negative tapered shape. For example, a width of the separatingpartition 420 may decrease as a distance from the device substrate 100decreases.

The separating partition 420 may include a region disposed in the overpenetrating hole 140 h. For example, the first separation side 421 s ofthe separating partition 420 may be disposed in the over penetratinghole 140 h. The second separation side 422 s of the separating partition420 may be disposed between the lower passivation layer 130 and theover-coat layer 140 of the bezel area BZ. For example, the second overside 142 s of the over penetrating hole 140 h may overlap the separatingpartition 420.

The over-coat layer 140 and the separating partition 420 of the bezelarea BZ may define at least one moisture blocking hole BH. For example,the moisture blocking hole BH may be disposed between the first overside 141 s of the over penetrating hole 140 h and the first separationside 421 s of the separating partition 420. The first over side 141 s ofthe over penetrating hole 140 h may be defined as a first blocking sideof the moisture blocking hole BH. The first separation side 421 s of theseparating partition BH may be defined as a second blocking side of themoisture blocking hole BH. That is, in the display apparatus accordingto the embodiment of the present disclosure, the moisture blocking holeBH defined by the over-coat layer 140 of the bezel area BZ and theseparating partition 420 may include the first blocking side 141 shaving a positive tapered shape and the second blocking side 421 shaving a negative tapered shape. The first blocking side 141 s of themoisture blocking hole BH may face the display area AA. The moistureblocking hole BH may penetrate the over-coat layer 140 of bezel area BZ.

A reflective pattern 500 may be disposed between the gate insulatinglayer 120 and the lower passivation layer 130 of the bezel area BZ. Thereflective pattern 500 may include a material having a high reflectance.For example, the reflective pattern 500 may include a metal. Thereflective pattern 500 may be formed using a process of forming thepixel driving circuit DC in each pixel area PA. For example, thereflective pattern 500 may include the same material as the second gateelectrode 223 of the second thin film transistor T2 in each pixel areaPA.

The reflective pattern 500 may overlap the moisture blocking hole BH andthe separating partition 420. For example, the first over side 141 s andthe second over side 142 s of the over penetrating hole 140 h may bedisposed on the reflective pattern 500. The over penetrating hole 140 hmay overlap the reflective pattern 500. The reflective pattern 500 mayextend beyond the over penetrating hole 140 h and the separatingpartition 420. For example, the second separation side 422 s of theseparating partition 420 may be disposed on the reflective pattern 500.

The lower passivation layer 130 may include a lower penetrating hole 130h overlapping with the moisture blocking hole BH. For example, the lowerpenetrating hole 130 h may be disposed between the first blocking side141 s and the second blocking side 421 s of the moisture blocking holeBH. The lower penetrating hole BH may penetrate the lower passivationlayer 130. For example, a portion of the reflective pattern 500 may beexposed by the lower penetrating hole 130 h and the moisture blockinghole BH.

A barrier pattern 315 may be disposed on the first blocking side 141 sof the moisture blocking hole BH. The barrier pattern 315 may include amaterial capable of preventing the penetration of the external moisture.The barrier pattern 315 may be formed using a process of forming thelight-emitting device 300. For example, the barrier pattern 315 mayinclude the same material as the first electrode 310 in each pixel areaPA. The barrier pattern 315 may be in direct contact with the over-coatlayer 140. For example, the first blocking side 141 s of the moistureblocking hole BH may be in direct contact with the barrier pattern 315.

The barrier pattern 315 may extend inside the lower penetrating hole 130h. For example, the portion of the reflective pattern 500 exposed by thelower penetrating hole 130 h may be covered by the barrier pattern 315.The barrier pattern 315 may be in direct contact with the reflectivepattern 500 in the lower penetrating hole 130 h. Thus, in the displayapparatus according to the embodiment of the present disclosure, thepenetration of the external moisture through the first blocking side 141s of the moisture blocking hole BH may be prevented by the barrierpattern 315.

The light-emitting layer 320 and the second electrode 330 of eachlight-emitting device 300 may extend on the bezel area BZ of the devicesubstrate 100. For example, the light-emitting layer 320 and the secondelectrode 330 may be stacked on the barrier pattern 315. The bankinsulating layer 150 of the bezel area BZ may include an opening 150 hoverlapping with the over penetrating hole 140 h and the separatingpartition 420. The light-emitting layer 320 and the second electrode 330may extend inside the lower penetrating hole 130 h. The light-emittinglayer 320 and the second electrode 330 may be partially separated by thefirst separation side 421 s of the separating partition 420. Forexample, the light-emitting layer 320 may include an end portiondisposed in the moisture blocking hole BH. The end portion 320 e of thelight-emitting layer 320 may be disposed on the barrier pattern 315. Thesecond electrode 330 may be in direct contact with the barrier pattern315 at the outside of the light-emitting layer 320. For example, thebarrier pattern 315 and the second electrode 330 may surround the endportion 320 e of the light-emitting layer 320 in the moisture blockinghole BH. Thus, in the display apparatus according to the embodiment ofthe present disclosure, the penetration of the external moisture throughthe light-emitting layer 320 may be prevented, regardless of the tailportion of the light-emitting layer 320. Therefore, in the displayapparatus according to the embodiment of the present disclosure, thedeterioration of the light-emitting layer 320 due to the externalmoisture may be prevented, without increasing the bezel area BZ.

And, the moisture blocking hole BH may be disposed between the displayarea AA and the separating partition 420. That is, in the displayapparatus according to the embodiment of the present disclosure, thepenetration of the external moisture through the separating partition420 may be prevented. Thus, in the display apparatus according to theembodiment of the present disclosure, the degree of freedom for amaterial of the separating partition 420 may be improved. Therefore, inthe display apparatus according to the embodiment of the presentdisclosure, the penetration of the external moisture may be effectivelyprevented.

A connecting pattern 290 may be disposed between the bezel area BZ ofthe device substrate 100 and the device buffer layer 110. The connectingpattern 290 may include a conductive material. For example, theconnecting pattern 290 may include the same material as thelight-blocking pattern 250. The connecting pattern 290 may overlap thereflective pattern 500. The signal wirings DL, GL and PL between thegate insulating layer 120 and the lower passivation layer 130 may crossthe bezel area BZ using the connecting pattern 290. For example, each ofthe gate lines GL disposed on the same layer as the reflective pattern500 may cross the moisture blocking hole BH using the connecting pattern290. Each of the gate lines GL may be electrically connected to theconnecting pattern 290 at the outside of the reflective pattern 500.That is, in the display apparatus according to the embodiment of thepresent disclosure, each of the signal wirings DL, GL and PL disposed onthe same layer as the reflective pattern 500 may bypass the reflectivepattern 500 using the connecting pattern 290. Each of the gate lines GLmay penetrate the device buffer layer 110 and the gate insulating layer120. Thus, in the display apparatus according to the embodiment of thepresent disclosure, the external moisture penetrating through theinterface between the device buffer layer 110 and the gate insulatinglayer 120 may be blocked by the gate lines GL. Therefore, in the displayapparatus according to the embodiment of the present disclosure, thedisconnection of the signal wirings DL, GL and PL may be prevented, andthe deterioration of the light-emitting layer 320 due to the externalmoisture may be effectively prevented.

An encapsulation substrate 700 may be attached on the second electrode330 of each light-emitting device 300 by an entire surface adhesivelayer 600. For example, the entire surface adhesive layer 600 mayinclude an adhesive material. The encapsulation substrate 700 mayprevent the damage of the light-emitting devices 300 due to the externalmoisture and impact. For example, the encapsulation substrate 700 mayinclude a material having a specific hardness or more. The encapsulationsubstrate 700 may include a material having relatively high thermalconductivity. For example, the encapsulation substrate 700 may include ametal, such as aluminum (Al), nickel (Ni) and iron (Fe). Thus, in thedisplay apparatus according to the embodiment of the present disclosure,the heat generated by the pixel driving circuit DC and thelight-emitting device 300 of each pixel area PA may be dissipatedthrough the encapsulation substrate 700. Therefore, in the displayapparatus according to the embodiment of the present disclosure, thedeterioration of the light-emitting layer 320 in each pixel area PA maybe effectively prevented.

The entire surface adhesive layer 600 and the encapsulation substrate700 may extend on the bezel area BZ of the device substrate 100. Forexample, the moisture blocking hole BH may be filled by the entiresurface adhesive layer 600. The encapsulation substrate 700 may overlapthe display area AA and the bezel area BZ of the device substrate 100.

FIGS. 5A to 13A and 5B to 13B are views sequentially showing a method offorming the display apparatus according to the embodiment of the presentdisclosure.

The method of forming the display apparatus according to the embodimentof the present disclosure will be described with reference to FIGS. 3A,3B, 4, 5A to 13A and 5B to 13B. First, the method of forming the displayapparatus according to the embodiment of the present disclosure mayinclude a step of providing a device substrate 100 including a displayarea AA in which a pixel areas PA is disposed, and a bezel area BZdisposed outside the display area AA, a step of forming a light-blockingpattern 250 on the pixel area PA of the device substrate 100, a step offorming a connecting pattern 290 on the bezel area BZ of the devicesubstrate 100, a step of forming a device buffer layer 110 on the devicesubstrate 100 in which the light-blocking pattern 250 and the connectingpattern 290 are formed, a step of forming a semiconductor pattern 221 onthe device buffer layer 110 of the pixel area PA, a step of forming agate insulating layer 120 on the device substrate 100 in which thesemiconductor pattern 221, a step of forming a gate electrode 223, asource electrode 225, a drain electrode 227 and a second capacitorelectrode 232 on the gate insulating layer 120 of the pixel area PA, astep of forming a gate line GL on the gate insulating layer 120 of thebezel area BZ, and a step of forming a reflective pattern 500 on thegate insulating layer 120 of the bezel area BZ, as shown in FIGS. 5A and5B.

The light-blocking pattern 250 may be formed of a material having a highreflectance. The connecting pattern 290 may be formed of a conductivematerial. The connecting pattern 290 may be formed simultaneously withthe light-blocking pattern 250. For example, the step of forming thelight-blocking pattern 250 and the connecting pattern 290 may include astep of forming a metal layer having high reflectance on the devicesubstrate 100, and a step of pattering the metal layer. The connectingpattern 290 may include the same material as the light-blocking pattern250.

The gate electrode 223, the source electrode 225, the drain electrode227 and the second capacitor electrode 232 may include a conductivematerial. The gate line GL may include a conductive material. Thereflective pattern 500 may include a material having a high reflectance.The gate line GL and the reflective pattern 500 may be formedsimultaneously with the gate electrode 223, the source electrode 225,the drain electrode 227 and the second capacitor electrode 232. Forexample, a step of forming the gate line GL, the reflective pattern 500,the gate electrode 223, the source electrode 225, the drain electrode227 and the second capacitor electrode 232 may include a step of forminga metal layer having high reflectance on the device substrate 100, and astep of pattering the metal layer. The gate line GL may include the samematerial as the reflective pattern 500. The gate line GL and thereflective pattern 500 may include the same material as the gateelectrode 223, the source electrode 225, the drain electrode 227 and thesecond capacitor electrode 232.

The gate line GL may be electrically connected to the connecting pattern290 at the outside of the reflective pattern 500. For example, a step offorming the gate line GL may include a step of exposing an end portionof the connecting pattern 290 by patterning the device buffer layer 110and the gate insulating layer 120. The reflective pattern 500 mayoverlap a central region of the connecting pattern 290. The gate line GLmay be spaced away from the reflective pattern 500. For example, thegate line GL may bypass a region in which the reflective pattern 500 isformed, using the connecting pattern 290. Thus, in the method of formingthe display apparatus according to the embodiment of the presentdisclosure, the disconnection of the gate line GL due to the reflectivepattern 500 may be prevented. And, in the method of forming the displayapparatus according to the embodiment of the present disclosure, thepenetration of the external moisture through the interface between thedevice buffer layer 110 and the gate insulating layer 120 may beprevented by the gate line GL.

The semiconductor pattern 221, the gate electrode 223, the sourceelectrode 225 and the drain electrode 227 may constitute a thin filmtransistor T2. A portion of the light-blocking pattern 250 mayconstitute a storage capacitor Cst. For example, a portion of thelight-blocking pattern 250 overlapping with the second capacitorelectrode 232 may function as a first capacitor electrode 231.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of forming a lowerpassivation layer 130 covering the gate line GL, the reflective pattern500, the thin film transistor T2 and the storage capacitor Cst on thedevice substrate 100, and a step of forming a filter material layer 400on the lower passivation layer 130, as shown in FIGS. 6A and 6B.

The lower passivation layer 130 may be formed of an insulating material.For example, the lower passivation layer 130 may be formed an inorganicinsulating material, such as silicon oxide (SiO) and silicon nitride(SiN). For example, a step of forming the lower passivation layer 130may include a step of depositing an inorganic insulating material on thedevice substrate 100.

The filter material layer 400 may include a material capable ofrealizing a specific color using light passing therethrough. Forexample, the filter material layer 400 may include a dye. The filtermaterial layer 400 may include a photo-sensitive material. For example,the filter material layer 400 may be formed of a material having anegative characteristic in which an area exposed by an exposure processis cured.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of arranging a mask patternMA including a first opening P1 and at least one second opening P2 onthe filter material layer 400, and a step of exposing a portion of thefilter material layer 400 using the mask pattern MA, as shown in FIGS.7A and 7B.

The first opening P1 may overlap a region in which a color filter isformed by a subsequent process. The first opening P1 may be disposed inthe pixel area PA. The first opening P1 may not overlap thelight-blocking pattern 250, the thin film transistor T2 and the storagecapacitor Cst. For example, the first opening P1 may be disposed outsidethe light-blocking pattern 250, the thin film transistor T2 and thestorage capacitor Cst.

The second opening P2 may overlap a region in which a separatingpartition is formed by a subsequent process. For example, the secondopening P2 may be disposed on the bezel area BZ. The second opening P2may overlap the reflective pattern 500. Thus, in the method of formingthe display apparatus according to the embodiment of the presentdisclosure, the light passing through the second opening P2 may bereflected in a direction of the filter material layer 400 by thereflective pattern 500 in the exposure process. That is, in the methodof forming the display apparatus according to the embodiment of thepresent disclosure, the light reflected by the reflective pattern 500may expose an lower end of the filter material layer 400 overlappingwith the second opening P2. Therefore, in the method of forming thedisplay apparatus according to the embodiment of the present disclosure,a side portion of a second region 400 b exposed by the second opening P2may be harder than a side portion of a first region 400 a exposed by thefirst opening P1. The light may be not irradiated to a third region 400c of the filter material layer 400 overlapping with the mask pattern MAin the exposure process. That is, the third region 400 c of the filtermaterial layer 400 may be not exposed in the exposure process.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of forming a color filter410 and at least one separating partition 420 on the lower passivationlayer 130, as shown in FIGS. 8A and 8B.

The step of forming the color filter 410 and the separating partition420 may include a step of removing the third region 400 c of the filtermaterial layer 400 which is not exposed by the mask pattern MA. Thecolor filter 410 may be formed on the lower passivation layer 130 of thepixel area PA. The separating partition 420 may be formed on the lowerpassivation layer 130 of the bezel area BZ. For example, the colorfilter 410 may be formed using the first region 400 a of the filtermaterial layer 400 exposed by the first opening P1, and the separatingpartition 420 may be formed using the second region 400 b of the filtermaterial layer 400 exposed by the second opening P2. A side of the colorfilter 410 may be the same as a side of the first region 400 a, and aside of the separating partition 420 may be the same as a side of thesecond region 400 b. For example, a first separation side 421 s towardthe display area AA and a second separation side 422 s opposite to thefirst separation side 421 s of the separating partition 420 may have anegative tapered shape. The first separation side 421 s and the secondseparation side 422 s of the separating partition 420 may have aninclination angle greater than the side of the color filter 410. Theseparating partition 420 may have the same thickness as the color filter410.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of curing the color filter410 and the separating partition 420, as shown in FIGS. 9A and 9B.

A side portion of the color filter 410 having a gentle slope may flowdown in a direction of the lower passivation layer 130 by the curingprocess. For example, the side of the color filter 410 may have apositive tapered shape by the curing process. The first separation side421 s and the second separation side 422 s of the separating partition420 having a steep slope may not flow down by the curing process. Forexample, the first separation side 421 s and the second separation side422 s of the separating partition 420 may maintain the negative taperedshape, after the curing process is completed.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of forming an over-coatlayer 140 including an electrode contact hole and at least one overpenetrating hole 140 h on the device substrate 100 in which the colorfilter 410 and the separating partition 420 are formed, and a step offorming a lower penetrating hole 130 h in the lower passivation layer130, as shown in FIGS. 10A and 10B.

The electrode contact hole may penetrate the over-coat layer 140 of thedisplay area AA. For example, the electrode contact hole may partiallyexpose the drain electrode 227 of the thin film transistor T2. The overpenetrating hole 140 h may penetrate the over-coat layer 140 of thebezel area BZ. For example, the over penetrating hole 140 h may overlapthe reflective pattern 500.

The over penetrating hole 140 h may have a positive tapered shape. Forexample, the over penetrating hole 140 h may include a first over side141 s toward the display area AA and a second over side 142 s oppositeto the first over side 141 s. The second over side 142 s of the overpenetrating hole 140 h may overlap the separating partition 420. Thus,in the method of forming the display apparatus according to theembodiment of the present disclosure, a moisture blocking hole BH may bedefined by the first over side 141 s of the over penetrating hole 140 hand the first separation side 421 s of the separating partition 420. Forexample, the first over side 141 s of the over penetrating hole 140 hmay be a first blocking side of the moisture blocking hole BH, and thefirst separation side 421 s of the separating partition 420 may be asecond blocking side of the moisture blocking hole BH. Therefore, in themethod of forming the display apparatus according to the embodiment ofthe present disclosure, the moisture blocking hole BH defined by thefirst over side 141 s of the over penetrating hole 140 h and the firstseparation side 421 s of the separating partition 420 may include thefirst blocking side 141 s having a positive tapered shape and the secondblocking side 421 s having a negative tapered shape opposite to thefirst blocking side 141 s.

The lower penetrating hole 130 h may overlap the moisture blocking holeBH. For example, the lower penetrating hole 130 h may be formed betweenthe first over side 141 s of the over penetrating hole 140 h and thefirst separation side 421 s of the separating partition 420. The lowerpenetrating hole 130 h may penetrate the lower passivation layer 130. Aportion of the reflective pattern 500 disposed between the first overside 141 s of the over penetrating hole 140 h and the first separationside 421 s of the separating partition 420 may be exposed by the lowerpenetrating hole 130 h.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of forming a firstelectrode 310 on the over-coat layer 140 of the pixel area PA, and astep of forming the barrier pattern 315 on the first over side 141 s, asshown in FIGS. 11A and 11B.

The first electrode 310 may be electrically connected to the drainelectrode 227 of the thin film transistor T2 through the electrodecontact hole. The first electrode 310 may include a conductive material.The barrier pattern 315 may include a conductive material. The barrierpattern 315 may be formed simultaneously with the first electrode 310.For example, a step of the first electrode 310 and the barrier pattern315 may include a step of forming a conductive material layer on thedevice substrate 100 in which the electrode contact hole and themoisture blocking hole BH, and a step of patterning the conductivematerial layer.

The conductive material layer may be partially separated by the firstseparation side 421 s of the separating partition 420, which is disposedinside the over penetrating hole 140 h. For example, the firstseparation side 421 s of the separating partition 420 may be not coveredby the conductive material layer. An end portion of the barrier pattern315 may be disposed inside the moisture blocking hole BH. The other endportion of the barrier pattern 315 may be disposed on the over-coatlayer 140 of the bezel area BZ.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of forming a bankinsulating layer 150 on the device substrate 100 in which the firstelectrode 310 and the barrier pattern 315 are formed, and a step offorming a light-emitting layer 320 on the device substrate 100 in whichthe bank insulating layer 150 is formed, as shown in FIGS. 12A and 12B.

The bank insulating layer 150 may expose a portion of the firstelectrode 310. The light-emitting layer 320 may be in contact with theportion of the first electrode 310 exposed by the bank insulating layer150. For example, the bank insulating layer 150 may define an emissionarea EA in the pixel area PA. An edge of the first electrode 310 may becovered by the bank insulating layer 150.

The bank insulating layer 150 may expose the moisture blocking hole BHand separating partition 420. For example, the light-emitting layer 320may be partially separated by the first separation side 421 s of theseparating partition 420. The light-emitting layer 320 may include anend portion disposed inside the moisture blocking hole BH. For example,an end portion of the light-emitting layer 320 may be disposed on thebarrier layer 315. The light-emitting layer 320 may be in direct contactwith the barrier pattern 315 in the moisture blocking hole BH. An endportion of the light-emitting layer 320 may be separated from theseparating partition 420 due to a thickness different by the lowerpenetrating hole 130 h.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of forming a secondelectrode 330 on the light-emitting layer 320, as shown in FIGS. 13A and13B.

A portion of the second electrode 330 formed on the emission area EA mayconstitute a light-emitting device 300 together with the portion of thefirst electrode 310 exposed by the bank insulating layer 150 and aportion of the light-emitting layer 320 on the portion of the firstelectrode 310.

The second electrode 330 formed on the bezel area BZ may be partiallyseparated by the first separation side 421 s of the separating partition420. For example, the second electrode 320 may include an end portiondisposed in the moisture blocking hole BH. The second electrode 330 maybe formed of a material and process having better step coverage than thelight emitting layer 320. For example, the second electrode 330 may bein direct contact with the barrier pattern 315 at the outside of thelight-emitting layer 320. An end portion of the light-emitting layer 320may be surrounded by the barrier pattern 315 and the second electrode330. Thus, in the method of forming the display apparatus according tothe embodiment of the present disclosure, the penetration of theexternal moisture through the light-emitting layer 320 may be prevented.

The method of forming the display apparatus according to the embodimentof the present disclosure may include a step of attaching anencapsulation substrate 700 using an entire surface adhesive layer 600on the second electrode 330, as shown in FIGS. 3A and 3B.

The step of attaching the encapsulation substrate 700 may include a stepof forming the entire surface adhesive layer 600 on the encapsulationsubstrate 700. For example, the moisture blocking hole BH may be filledby the entire surface adhesive layer 600. The first separation side 421s of the separating partition 420 in which the light-emitting layer 320and the second electrode 330 are not formed may be in direct contactwith the entire surface adhesive layer 800.

Accordingly, the display apparatus according to the embodiment of thepresent disclosure and the method of forming the same may include a stepof forming the separating partition 420 having a negative tapered sideon the bezel area BZ using the reflective pattern 500, a step of formingthe lower penetrating hole 130 h overlapping with the moisture blockinghole BH defined by the separating partition 420 and the over penetratinghole 140 h penetrating the over-coat layer 140 of the bezel area BZ, anda step of forming the barrier pattern 315 covering the first blockingside 141 s of the moisture blocking hole BH using a process of formingthe first electrode 310. Thus, in the display apparatus according to theembodiment of the present disclosure and the method of forming the same,the end portion 320 e of the light-emitting layer 320 may be surroundedby the barrier pattern 315 and the second electrode 330. Therefore, inthe display apparatus according to the embodiment of the presentdisclosure and the method of forming the same, the deterioration of thelight-emitting layer 320 due to the penetration of the external moisturemay be effectively prevented.

In the display apparatus according to the embodiment of the presentdisclosure, a plurality of the moisture blocking holes BH and aplurality of barrier patterns 315 may be formed on the bezel area BZ.Thus, in the display apparatus according to the embodiment of thepresent disclosure, the penetration of the external moisture through theinsulating layers 110, 120, 130, 140 and 150, which are stacked on thebezel area BZ may be effectively prevented. Thus, in the displayapparatus according to the embodiment of the present disclosure,lowering the quality of the image due to the external moisture may beeffectively prevented.

The display apparatus according to the embodiment of the presentdisclosure is described that the moisture blocking hole BH is defined bythe separating partition 420 including the same material as the colorfilter 410. However, in the display apparatus according to anotherembodiment of the present disclosure, the moisture blocking hole BH maybe formed in various ways. For example, in the display apparatusaccording to another embodiment of the present disclosure, the moistureblocking hole BH including a first blocking side S1 having a positivetapered shape and a second blocking side S2 having a negative taperedshape may be formed by the over-coat layer 130 of the bezel area BZ, asshown in FIG. 14 . The reflective pattern 500 overlapping with thesecond blocking side S2 may be spaced away from the first blocking sideS1. For example, the lower penetrating hole 130 h overlapping with themoisture blocking hole BH may expose an end portion of the reflectivepattern 500.

FIGS. 15 and 16 are views sequentially showing a method of forming thedisplay apparatus according to another embodiment of the presentdisclosure.

The method of forming the display apparatus according to anotherembodiment of the present disclosure will be described with reference toFIGS. 14 to 16 . First, the method of forming the display apparatusaccording to another embodiment of the present disclosure may include astep of forming reflective patterns 500 at the same time as a gate lineGL, a step of forming a lower passivation layer 130 and a filtermaterial layer 400 on a device substrate 100 in which the reflectivepatterns 500 are formed, a step of arranging a mask pattern MA includingopenings P3 overlapping with an end portion of each reflective pattern500 on the filter material layer 400, and a step of exposing a portionof the filter material layer 400 using the mask pattern MA, as shown inFIG. 15 .

The filter material layer 400 may include a photo-sensitive material.For example, the filter material layer 400 may be formed of a materialhaving a positive characteristic in which an area exposed by an exposureprocess is removed.

The reflective patterns 500 may be spaced away from each other. Each ofthe openings P3 may overlap one of the reflective patterns 500. Forexample, an end portion of each reflective pattern 500 may overlap themask pattern MA, and the other end of each reflective pattern 500 mayoverlap one of the opening P3. Thus, in the display apparatus accordingto another embodiment of the present disclosure, only a lower end of theregions of the filter material layer 400 overlapping each opening P3 maybe exposed by light reflected by the reflective patterns 500. Forexample, in the display apparatus according to another embodiment of thepresent disclosure, each of exposed regions 400 d of the filter materiallayer 400 by exposure process using the mask pattern MA may haveparallel sides.

The method of forming the display apparatus according to anotherembodiment of the present disclosure may include a step of formingmoisture blocking holes BH by removing the exposed regions 400 d of thefilter material layer 400, as shown in FIG. 16 .

The moisture blocking holes BH may have the same shape as the exposedregions 400 d. For example, each of the moisture blocking holes BH mayinclude a first blocking side S1 having a positive tapered shape and asecond blocking side S2 having a negative tapered shape. The firstblocking side S1 of each moisture blocking hole BH may face the displayarea AA. The second blocking side S2 of each moisture blocking hole BHmay be opposite to the display area AA.

The method of forming the display apparatus according to anotherembodiment of the present disclosure may include a step of removing thelower passivation layer 130 exposed by each moisture blocking hole BH,and a step of forming a bank insulating layer 150, barrier patterns 315,a light-emitting device 300, an entire surface adhesive layer 600 and anencapsulation substrate 700 on the device substrate 100 in which themoisture blocking holes BH are formed, as shown in FIG. 14 . Thus, inthe display apparatus according to another embodiment of the presentdisclosure and the method of forming the same, the penetration of theexternal moisture may be effectively prevented using each moistureblocking hole BH, without the formation of the separating partition.Therefore, in the display apparatus according to another embodiment ofthe present disclosure and the method of forming the same, the processefficiency may be improved. That is, in the display apparatus accordingto another embodiment of the present disclosure and the method offorming the same, the degree of freedom for a process of forming themoisture blocking hole BH may be improved.

In the display apparatus according to another embodiment of the presentdisclosure, the moisture blocking holes BH having various sizes may beformed. Thus, the display apparatus according to another embodiment ofthe present disclosure may minimize the influence of the moistureblocking holes BH on the signal wiring disposed on the bezel region BZ,and may effectively prevent the penetration of the external moisture.

In the result, the display apparatus according to the embodiments of thepresent disclosure may comprise the over-coat layer disposed on thedisplay area and the bezel area of the device substrate, thelight-emitting device on the over-coat layer of the display area, themoisture blocking hole penetrating the over-coat layer of the bezelarea, the lower passivation layer disposed between the device substrateand the over-coat layer, and the barrier pattern disposed on the firstblocking side of the moisture blocking hole having a positive taperedshape, wherein the lower passivation layer may include the lowerpenetrating hole overlapping with the moisture blocking hole, whereinthe barrier pattern may extend in the lower penetrating hole, andwherein the light-emitting layer and the second electrode of thelight-emitting device may extend on the barrier pattern. Thus, in thedisplay apparatus according to the embodiments of the presentdisclosure, the penetration of the external moisture through theover-coat layer and the light-emitting layer may be prevented, withoutincreasing the bezel area. Thereby, in the display apparatus accordingto the embodiments of the present disclosure, the deterioration of thelight-emitting layer due to the external moisture may be prevented,without decreasing the display area.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. A display apparatus comprising: a device substrate including adisplay area and a bezel area; a reflective pattern disposed on thebezel area of the device substrate; a separating partition disposed onthe reflective pattern, the separating partition including a firstseparation side having a negative tapered shape; an over-coat layerdisposed on the device substrate, the over-coat layer including an overpenetrating hole, the over penetrating hole having a first over sidebeing spaced away from the first separation side and a second over sideoverlapping with the separating partition; a lower passivation layerdisposed between the reflective pattern and the separating partition,the lower passivation layer including a lower penetrating hole disposedbetween the first over side and the first separation side; alight-emitting device including a first electrode, a light-emittinglayer and a second electrode, which are stacked on one another and onthe over-coat layer in the display area; and a barrier pattern disposedon the first over side of the over penetrating hole, the barrier patternextending inside the lower penetrating hole, wherein the light-emittinglayer and the second electrode extend on the barrier pattern.
 2. Thedisplay apparatus according to claim 1, wherein an end portion of thelight-emitting layer is surrounded by the barrier pattern and the secondelectrode.
 3. The display apparatus according to claim 1, wherein thebarrier pattern includes a same material as the first electrode of thelight-emitting device.
 4. The display apparatus according to claim 3,further comprising a bank insulating layer covering an edge of the firstelectrode, the bank insulating layer extending on the bezel area of thedevice substrate, wherein an end portion of the barrier pattern isdisposed between the over-coat layer and the bank insulating layer ofthe bezel area.
 5. The display apparatus according to claim 1, furthercomprising a thin film transistor disposed between the display area ofthe device substrate and the lower passivation layer, wherein thereflective pattern includes a same material as a gate electrode of thethin film transistor.
 6. The display apparatus according to claim 5,wherein a gate insulating layer of the thin film transistor extendsbetween the device substrate and the reflective pattern.
 7. The displayapparatus according to claim 5, further comprising: a device bufferlayer disposed between the device substrate and the thin filmtransistor, the device buffer layer extending between the devicesubstrate and the reflective pattern; a connecting pattern disposedbetween the device substrate and the device buffer layer, the connectingpattern including a region overlapping with the reflective pattern; anda signal wiring disposed between the device buffer layer and the lowerpassivation layer, the signal wiring crossing the bezel area, whereinthe signal wiring is connected to a connecting pattern outside of thereflective pattern.
 8. The display apparatus according to claim 7,further comprising a light-blocking pattern disposed between the devicesubstrate and the device buffer layer, the light-blocking patternoverlapping with a semiconductor pattern of the thin film transistor,wherein the connecting pattern includes a same material as thelight-blocking pattern.
 9. The display apparatus according to claim 1,further comprising a color filter disposed between the lower passivationlayer and the over-coat layer, the color filter overlapping with thelight-emitting device, wherein the separating partition includes a samematerial as the color filter.
 10. The display apparatus according toclaim 9, wherein a side of the color filter has a positive taper shape.11. A display apparatus comprising: a light-emitting device including afirst electrode, a light-emitting layer and a second electrode, whichare stacked on one another and on a display area of a device substrate;an over-coat layer disposed between the device substrate and thelight-emitting layer, the over-coat layer extending on a bezel area ofthe device substrate; a first moisture blocking hole penetrating theover-coat layer of the bezel area, the first moisture blocking holeincluding a first blocking side having a positive tapered shape and asecond blocking side having a negative tapered shape; a first reflectivepattern disposed between the bezel area of the device substrate and theover-coat layer, the first reflective pattern overlapping with thesecond blocking side of the first moisture blocking hole; a lowerpassivation layer disposed between the first reflective pattern and theover-coat layer, the lower passivation layer including a first lowerpenetrating hole disposed between the first blocking side and the secondblocking side; and a first barrier pattern disposed on the firstblocking side of the first moisture blocking hole, the first barrierpattern extending inside the first penetrating hole, wherein thelight-emitting layer and the second electrode extend on the firstblocking side of the first moisture blocking hole.
 12. The displayapparatus according to claim 11, wherein the first reflective pattern isspaced away from the first blocking side of the first moisture blockinghole.
 13. The display apparatus according to claim 11, furthercomprising: a second moisture blocking hole disposed on the bezel areaof the device substrate, the second moisture blocking hole being spacedaway from the first moisture blocking hole; and a second reflectivepattern disposed between the bezel area of the device substrate and theover-coat layer, the second reflective pattern being spaced away fromthe first reflective pattern, wherein the second moisture blocking holeincludes a third blocking side having a positive tapered shape and afourth blocking side having a negative tapered shape, wherein the secondreflective pattern overlaps the fourth blocking side of the secondmoisture blocking hole, and wherein the lower passivation layer includesa second lower penetrating hole disposed between the third blocking sideand the fourth blocking side.
 14. The display apparatus according toclaim 13, further comprising a second barrier pattern disposed on thethird blocking side of the second moisture blocking hole, the secondbarrier pattern extending inside the second lower penetrating hole. 15.The display apparatus according to claim 14, wherein the second barrierpattern includes a same material as the first barrier pattern.
 16. Adisplay apparatus comprising: a substrate including a display area and abezel area; a reflective pattern disposed on the bezel area of thesubstrate; a separating partition disposed on the substrate; anover-coat layer disposed on the substrate, the over-coat layer includinga first hole, at least a portion of the separating partition beingexposed from the first hole; a lower passivation layer disposed betweenthe substrate and the separating partition, the lower passivation layerincluding a second hole that overlaps the first hole; a barrier patternlayer disposed on the over-coat layer and extending into the first hole;and a light-emitting device including a first electrode, alight-emitting layer and a second electrode stacked on one another andon the over-coat layer in the display area.
 17. The display apparatusaccording to claim 16, wherein the barrier pattern extends into thesecond hole.
 18. The display apparatus according to claim 16, wherein atleast a portion of a side wall of the separating partition is exposedfrom the barrier pattern in the first hole.
 19. The display apparatusaccording to claim 16, wherein the first hole includes a first sidewallportion that overlaps the separating partition and a second sidewallportion that offsets from the separating partition.
 20. The displayapparatus according to claim 19, wherein the reflective pattern overlapswith the first sidewall portion and offsets from the second sidewallportion of the first hole.